<?xml version="1.0" encoding="UTF-8"?>
<mods xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://www.loc.gov/mods/v3" version="3.1" xsi:schemaLocation="http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-1.xsd">
  <titleInfo>
    <title>Organometallic vapor-phase epitaxy</title>
    <subTitle>theory and practice</subTitle>
  </titleInfo>
  <name type="personal">
    <namePart>Stringfellow, Gerald B.</namePart>
    <namePart type="date">1942-</namePart>
    <role>
      <roleTerm authority="marcrelator" type="text">creator</roleTerm>
    </role>
  </name>
  <typeOfResource>text</typeOfResource>
  <originInfo>
    <place>
      <placeTerm type="code" authority="marccountry">cau</placeTerm>
    </place>
    <place>
      <placeTerm type="text">San Diego</placeTerm>
    </place>
    <publisher>Academic Press</publisher>
    <dateIssued>1999</dateIssued>
    <edition>2. ed.</edition>
    <issuance>monographic</issuance>
  </originInfo>
  <language>
    <languageTerm authority="iso639-2b" type="code">eng</languageTerm>
  </language>
  <language>
    <languageTerm authority="iso639-2b" type="code">spa</languageTerm>
  </language>
  <physicalDescription>
    <form authority="marcform">print</form>
    <extent>xxiv, 572 s. : ill. ; 24 cm.</extent>
  </physicalDescription>
  <abstract>This book describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of the technique but also contains lists of data useful for the everyday operation of OMVPE reactors. It also offers specific recipes that can be used to produce a wide range of specific materials, structures, and devices. Key Features * Updated with new emphasis on the semiconducting nitride materialsGaN and its alloys with In and Al * Emphasizes the newly understood aspects of surface processes * Contains a new chapter, as well as several new sections in chapters on thermodynamics and kinetics.</abstract>
  <note type="statement of responsibility">Gerald B. Stringfellow.</note>
  <subject authority="lcsh">
    <topic>Compound semiconductors</topic>
  </subject>
  <subject>
    <topic>Semiconductores compuestos</topic>
  </subject>
  <subject>
    <topic>Epitaxia</topic>
  </subject>
  <subject authority="lcsh">
    <topic>Epitaxy</topic>
  </subject>
  <subject>
    <topic>Crystal growth</topic>
  </subject>
  <subject>
    <topic>Vapor-plating</topic>
  </subject>
  <classification authority="lcc">QC 611.8  S918o 1999</classification>
  <classification authority="ddc" edition="21">537.6</classification>
  <classification authority="z">Fyskem</classification>
  <identifier type="isbn">0126738424</identifier>
  <identifier type="isbn">9780126738421</identifier>
  <recordInfo>
    <recordContentSource authority="marcorg">DKDLA</recordContentSource>
    <recordCreationDate encoding="marc">091214</recordCreationDate>
    <recordChangeDate encoding="iso8601">20230410132759.0</recordChangeDate>
    <languageOfCataloging>
      <languageTerm authority="iso639-2b" type="code">dan</languageTerm>
    </languageOfCataloging>
  </recordInfo>
</mods>
