Organometallic vapor-phase epitaxy : theory and practice / Gerald B. Stringfellow.

By:

Stringfellow, Gerald B, 1942-

Material type:

TextLanguage: Spanish Publication details: San Diego : Academic Press, 1999.Edition: 2. edDescription: xxiv, 572 s. : ill. ; 24 cmISBN:

0126738424
9780126738421

Subject(s):

DDC classification:

537.6 21

LOC classification:

QC 611.8 S918o 1999

Other classification:

Fyskem

Summary: This book describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of the technique but also contains lists of data useful for the everyday operation of OMVPE reactors. It also offers specific recipes that can be used to produce a wide range of specific materials, structures, and devices. Key Features * Updated with new emphasis on the semiconducting nitride materialsGaN and its alloys with In and Al * Emphasizes the newly understood aspects of surface processes * Contains a new chapter, as well as several new sections in chapters on thermodynamics and kinetics.

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Holdings
Item type	Current library	Home library	Collection	Shelving location	Call number	Copy number	Status	Barcode
Libro	Biblioteca Juan Bosch	Biblioteca Juan Bosch	Humanidades	Humanidades (4to. Piso)	QC 611.8 S918o 1999 (Browse shelf(Opens below))	1	Available	00000066809

This book describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of the technique but also contains lists of data useful for the everyday operation of OMVPE reactors. It also offers specific recipes that can be used to produce a wide range of specific materials, structures, and devices. Key Features * Updated with new emphasis on the semiconducting nitride materialsGaN and its alloys with In and Al * Emphasizes the newly understood aspects of surface processes * Contains a new chapter, as well as several new sections in chapters on thermodynamics and kinetics.

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